Gunn Oscillators


ZAX Gunn Oscillators utilize the bulk negative conductance properties of Gallium Arsenide (GaAs) and Indium Phosphide (InP) Gunn diodes to convert direct current (dc) into power at millimeter wave frequencies. Circuits incorporating the Gunn diodes are designed to provide state-of-the-art performance at frequencies from 18 GHz to above 120 GHz. InP Gunn Oscillators yield higher output power, higher efficiency, and lower AM noise than their GaAs counterparts. Tunable models feature high power-bandwidth products. Custom units are available to meet special customer requirements. ZAX is continuously advancing the state-of-the-art with new models to meet the highest performance requirements.



Each Gunn diode requires a specified dc voltage for optimal operation. The current required to turn-on a Gunn oscillator (the threshold current) normally exceeds the operating current as illustrated in Figure 1. The power supply should have low ripple to minimize AM and FM noise.


ZAX Millimeter Wave Corporation, 1558 Howard Access Rd, Upland, CA 91786
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